2 April 2004 Identification and elimination of trench crystal defects in sub-0.13-μm era
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Abstract
A series of study of trench dislocation occurred in 0.13/0.18um CMOS technologies have been done. First, it is demonstrated for the first time that trench crystal dislocations can be detected successfully using current mapping atomic force microscopy (C-AFM). Different from conventional voltage contrast technique, which uses SEM image brightness for the comparison of leaky contacts/junctions and normal ones, C-AFM probes the surface of samples by contacting them directly and can provide I-V curve mapping data for each contact/junction where the needle passes. Thus a quantified contact/junction leakage current data is acquired and can be used to find out minor trench dislocation (located beneath the leaky contact), which works as a leakage source negligible before but crucial in 0.13um low power devices. Besides, a model concerning about the FEOL overall thermal budget is proposed to explain the formation of trench dislocations.
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Chun-Chen Yeh, Chun-Chen Yeh, Chung-Chen Chen, Chung-Chen Chen, Tser-Hua Lu, Tser-Hua Lu, Chia-Ming Shen, Chia-Ming Shen, Jong-Hsian Chuang, Jong-Hsian Chuang, Jon Lee, Jon Lee, Chiang Fu, Chiang Fu, Ya-Dien Sheu, Ya-Dien Sheu, } "Identification and elimination of trench crystal defects in sub-0.13-μm era", Proc. SPIE 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III, (2 April 2004); doi: 10.1117/12.521724; https://doi.org/10.1117/12.521724
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