Modeling mobility degradation in scanning capacitance microscopy for semiconductor dopant profile measurement

Yang D. Hong; Yew Tong Yeow

doi:10.1117/12.522025

2 April 2004 Modeling mobility degradation in scanning capacitance microscopy for semiconductor dopant profile measurement

Yang D. Hong, Yew Tong Yeow

Author Affiliations +

Proceedings Volume 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III; (2004) https://doi.org/10.1117/12.522025
Event: Microelectronics, MEMS, and Nanotechnology, 2003, Perth, Australia

Abstract

This paper addresses the influence of mobility degradation on the SCM measurement via modeling and comparison with experimental SCM data. The rational for looking into mobility effect is that SCM capacitance measurement is carried out at 915 MHz. At this frequency, resistance of semiconductor surface can be comparable to the reactance of the SCM capacitance. In our simulation carrier mobilities at the semiconductor surface are set low compared to their bulk values to reflect surface mobility degradation. Our results show that the simulated SCM dC/dV is significantly reduced in the vicinity of p-n junction reflecting what is observed in experiment. We attribute this to the fact that the capacitance between the inverted surface and the SCM probe is not detected due to the high resistance (compared to the reactance of the SCM capacitance) of the inversion layer below the semiconductor and the oxide interface. Only the capacitance on the accumulation side is extracted thus leading to the lowering of the detected SCM capacitance and dC/dV. The major conclusion is that the effect of high resistance due to mobility degradation has to be treated carefully for accurate extraction of dopant profile from experimental SCM data.

Citation Download Citation

Yang D. Hong and Yew Tong Yeow "Modeling mobility degradation in scanning capacitance microscopy for semiconductor dopant profile measurement", Proc. SPIE 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III, (2 April 2004); https://doi.org/10.1117/12.522025

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Particle filters

Capacitance

Semiconductors

Resistance

Data modeling

Interfaces

Oxides

Show All Keywords

Keywords/Phrases

Search In:

Publication Years