High-aspect-ratio etching and characterization of 2D photonic crystals in InP/InGaAsP/InP heterostructures

Srinivasan Anand; Min Qiu; Mikael Mulot; Marcin Swillo; Bozena Jaskorzynska; Anders Karlsson

doi:10.1117/12.525050

25 March 2004 High-aspect-ratio etching and characterization of 2D photonic crystals in InP/InGaAsP/InP heterostructures

Srinivasan Anand, Min Qiu, Mikael Mulot, Marcin Swillo, Bozena Jaskorzynska, Anders Karlsson

Author Affiliations +

Proceedings Volume 5277, Photonics: Design, Technology, and Packaging; (2004) https://doi.org/10.1117/12.525050
Event: Microelectronics, MEMS, and Nanotechnology, 2003, Perth, Australia

Abstract

We report on the fabrication and characterization of 2D photonic crystals (PhCs) in InP/InGaAsP/InP heterostructures. It is demonstrated that Ar/Cl2 based chemically assisted ion beam etching (CAIBE) is a very promising method to obtain high aspect ratio etching of PhCs in the InP-based materials. With this process, it is possible to obtain PC-holes as deep as 3 microns even for feature (PhC-hole) sizes as small as 200-250 nm. The optical characteristic of the fabricated PhC-based elements/devices such as line-defect waveguides, in-plane resonant cavities and drop-filter based on contra-directional coupling will be reported. The devices were measured using end-fire coupling and the obtained results were simulated using the 2D finite difference time domain (FDTD) method including an effective loss-approximation. The etched PhC-waveguides show low transmission losses, less than 1 dB/100 μm. A quality factor of 400 for a 6 micron long cavity with 6-hole mirrors is obtained. Finally, drop-functionality in a PhC-based filter using contra-directional coupling is demonstrated.

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Srinivasan Anand, Min Qiu, Mikael Mulot, Marcin Swillo, Bozena Jaskorzynska, and Anders Karlsson "High-aspect-ratio etching and characterization of 2D photonic crystals in InP/InGaAsP/InP heterostructures", Proc. SPIE 5277, Photonics: Design, Technology, and Packaging, (25 March 2004); https://doi.org/10.1117/12.525050

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