25 March 2004 Nonlinear free carrier absorption in semiconductor heterostructures in the terahertz regime
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Abstract
Absorption of electromagnetic waves in electronic systems coupled to intense terahertz waves is calculated. We formulate a theoretical framework suitable for calculating the frequency-dependent electrical current under an intense THz radiation. This first principle method is based on the time-evolution of electron density matrix and it includes electron-photon coupling to all orders. We first obtained the time-dependent electronic states as a function of terahertz field and frequency. The electron-impurity scattering is included to the second order. The absorption of electromagnetic waves of a probing field via various electron-terahertz-photon coupling is then obtained in terms of frequency-dependent dielectric functions.
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Chao Zhang, Chao Zhang, Saeid Hessami Pilehrood, Saeid Hessami Pilehrood, } "Nonlinear free carrier absorption in semiconductor heterostructures in the terahertz regime", Proc. SPIE 5277, Photonics: Design, Technology, and Packaging, (25 March 2004); doi: 10.1117/12.521175; https://doi.org/10.1117/12.521175
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