Single model proposed for the combination of narrow and wide GaAs wells for the computation of the linewidth enhancement factor

Fatih V. Celebi; Kenan Danisman; Remzi Yildirim

doi:10.1117/12.523313

25 March 2004 Single model proposed for the combination of narrow and wide GaAs wells for the computation of the linewidth enhancement factor

Fatih V. Celebi, Kenan Danisman, Remzi Yildirim

Author Affiliations +

Proceedings Volume 5277, Photonics: Design, Technology, and Packaging; (2004) https://doi.org/10.1117/12.523313
Event: Microelectronics, MEMS, and Nanotechnology, 2003, Perth, Australia

Abstract

A different method and single model to determine the linewidth enhancement factor [α (Alpha) parameter] for narrow and wide GaAs Quantum-wells (QWs) as a function of modal peak gain and current density is presented. Based on the Artificial Neural Network (ANN) modeling approach, different learning algorithms are trained and tested. Both the training and the test results are in very good agreement with the experimental results reported elsewhere.

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Fatih V. Celebi, Kenan Danisman, and Remzi Yildirim "Single model proposed for the combination of narrow and wide GaAs wells for the computation of the linewidth enhancement factor", Proc. SPIE 5277, Photonics: Design, Technology, and Packaging, (25 March 2004); https://doi.org/10.1117/12.523313

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