Paper
25 March 2004 Tailoring the EL spectrum of the GaAlInP DBR LED by the one-dimensional GaAlAs/AlAs photonic band-gap structure
Hao Wang, Changjun Liao, Guanghan Fan, Jiye Cai
Author Affiliations +
Proceedings Volume 5277, Photonics: Design, Technology, and Packaging; (2004) https://doi.org/10.1117/12.532749
Event: Microelectronics, MEMS, and Nanotechnology, 2003, Perth, Australia
Abstract
The GaAlAs/AlAs one-dimensional photonic band gap structure (1D-PBG) was proposed according to the transmission theory. This structure was utilized to tailor the EL spectrum of the commercial GaAlInP red double-heterojunction distributed Bragg reflector LED (DH DBR-LED), whose EL spectrum distributes from 620nm to 670nm (inspired at 120mA). The designed 1D PBG was employed to tailor the spectrum at the area from 620nm to 635nm, 640nm to 655nm, and 660nm to 670nm, left the windows at about 630nm, 640nm, 655nm, and 672nm. This 1D PBG was caped on the DBR-LED surface, and realized by MOCVD method. The EL spectrum of the sample has the illumination peak at 631nm, 640nm, 655nm and 672nm. The result is very consistent with the calculation. The spectrum of the LED was tailored according to the design. The influence of the 1D-PBG to the light emitting angle was studied too.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hao Wang, Changjun Liao, Guanghan Fan, and Jiye Cai "Tailoring the EL spectrum of the GaAlInP DBR LED by the one-dimensional GaAlAs/AlAs photonic band-gap structure", Proc. SPIE 5277, Photonics: Design, Technology, and Packaging, (25 March 2004); https://doi.org/10.1117/12.532749
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KEYWORDS
Electroluminescence

Light emitting diodes

Photonic crystals

Metalorganic chemical vapor deposition

Analog electronics

Applied physics

Distributed Bragg reflectors

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