12 May 2004 Beta-In2S3 thin films prepared by the sulpherization of evaporated indium films
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Proceedings Volume 5280, Materials, Active Devices, and Optical Amplifiers; (2004) https://doi.org/10.1117/12.520496
Event: Asia-Pacific Optical and Wireless Communications, 2003, Wuhan, China
Abstract
β-In2S3 films were grown on glass and quartz substrates by the rapid heating of metallic indium films in H2S atmosphere. The effect of sulphurisation temperature and time on the growth of single phase In2S3 and its electrical and optical properties have been investigated. The influences of processing parameters on the electrical and optical properties have been studied. The band gaps of In2S3 films were in the range 1.9 eV to 2.3eV. All the films exhibit n-type conductivity. The studies on temperature dependence of conductivity indicate a variable range hopping mechanism.
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Yoosuf Rahana, Yoosuf Rahana, Kalloor Cheekku Jerome, Kalloor Cheekku Jerome, Antony Aldrin, Antony Aldrin, Manoj Ramachandran, Manoj Ramachandran, Madambi Kunjukuttan Jayaraj, Madambi Kunjukuttan Jayaraj, } "Beta-In2S3 thin films prepared by the sulpherization of evaporated indium films", Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); doi: 10.1117/12.520496; https://doi.org/10.1117/12.520496
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