12 May 2004 Correlation between the g-r noise in semiconductor lasers and device reliability
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Proceedings Volume 5280, Materials, Active Devices, and Optical Amplifiers; (2004); doi: 10.1117/12.521647
Event: Asia-Pacific Optical and Wireless Communications, 2003, Wuhan, China
Abstract
The g-r noise in semiconductor lasers and its relation with device quality and reliability are studied. The results indicated that g-r noise has close relation with semiconductor defects, the devices with g-r noise degrade rapidly during electric aging, the P-I characteristics of the devices evidently become bad, or the devices have failed after aging. By measuring g-r noise in semiconductor lasers, the devices quality and reliability can be estimated, which is an effective and non-destructive method.
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Guijun Hu, Yadong Sun, Hongmei Zhang, Jing Li, Yingxue Shi, Jiawei Shi, "Correlation between the g-r noise in semiconductor lasers and device reliability", Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); doi: 10.1117/12.521647; https://doi.org/10.1117/12.521647
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KEYWORDS
Reliability

Semiconductor lasers

Electrical breakdown

Power supplies

Semiconductors

Heterojunctions

Measurement devices

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