12 May 2004 Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well
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Proceedings Volume 5280, Materials, Active Devices, and Optical Amplifiers; (2004); doi: 10.1117/12.523225
Event: Asia-Pacific Optical and Wireless Communications, 2003, Wuhan, China
Abstract
Effects of SiO2 encapsulation and rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs single quantum well (SQW) were studied by low temperature photoluminescence (PL). A blueshift of the PL peak energy for both the SiO2-capped region and the bare region was observed. The results were attributed to the nitrogen reorganization in the GaNAs/GaAs SQW. It was also shown that the nitrogen reorganization was obviously enhanced by SiO2 cap-layer. A simple model [1] was used to describe the SiO2-enhanced blueshift of the low temperature PL peak energy.
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Ying-Qiang Xu, Wei Zhang, Zichuang Niu, Ronghan Wu, Qiming Wang, "Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well", Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); doi: 10.1117/12.523225; https://doi.org/10.1117/12.523225
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KEYWORDS
Nitrogen

Quantum wells

Annealing

Chemical species

Diffusion

Gallium arsenide

Luminescence

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