12 May 2004 High-coupling efficiency and high-speed InP/InGaAs resonant-cavity-enhanced photodetector with micropectinated carrier collected layer
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Proceedings Volume 5280, Materials, Active Devices, and Optical Amplifiers; (2004) https://doi.org/10.1117/12.523000
Event: Asia-Pacific Optical and Wireless Communications, 2003, Wuhan, China
Abstract
High efficiency, long wavelengths InP/InGaAs resonant-cavity enhanced (RCE) Photodetector was fabricated. To circumvent the difficulty in achieving high reflective InP-based DBR, the Si/SiO2 DBR was evaporated as the bottom mirror of the cavity by using back illumination from the substrate. A quantum efficiency of 80% at 1.583um was achieved with an absorption layer thickness of only 0.2um. In addition, the Micro-pectinated Carrier-Collected Layer (MCCL) was fabricated by proton implantations, thus device capacitance can be reduced without decreasing of the illuminating area. The bandwidth was increased from 600MHz to 800MHz experimentally by formation of MCCL, without decreasing of the quantum efficiency.
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Hui Huang, Hui Huang, Lei Lei, Lei Lei, Yanjun Li, Yanjun Li, Qi Wang, Qi Wang, Yongqing Huang, Yongqing Huang, Xiaomin Ren, Xiaomin Ren, } "High-coupling efficiency and high-speed InP/InGaAs resonant-cavity-enhanced photodetector with micropectinated carrier collected layer", Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); doi: 10.1117/12.523000; https://doi.org/10.1117/12.523000
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