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12 May 2004 High-speed directly modulated and uncooled long-wavelength DFB semiconductor lasers
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Proceedings Volume 5280, Materials, Active Devices, and Optical Amplifiers; (2004) https://doi.org/10.1117/12.523492
Event: Asia-Pacific Optical and Wireless Communications, 2003, Wuhan, China
Abstract
This paper summarizes the recent advances and results of uncooled, high-speed directly modulated long-wavelength DFB laser diodes. It discusses ways of obtaining high temperature operation of laser diodes. By assessing the effect of carrier transport, doping and strain in active region, as well as the non-active region factor, such as laser waveguide properties and microwave parasitic parameters, various methods are discussed to improve the direct modulation bandwidth.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dingli Wang, Jun Zhang, Tao Liu, Xiaodong Huang, Chuanwen Li, and Ruikang Zhang "High-speed directly modulated and uncooled long-wavelength DFB semiconductor lasers", Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); https://doi.org/10.1117/12.523492
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