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12 May 2004 Long-wavelength oxide-confined VCSEL using InGaAsN quantum wells
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Proceedings Volume 5280, Materials, Active Devices, and Optical Amplifiers; (2004) https://doi.org/10.1117/12.520474
Event: Asia-Pacific Optical and Wireless Communications, 2003, Wuhan, China
Abstract
Characteristics of oxide-confined vertical-cavity surface emitting laser emitting at 1289nm will be presented in this paper. The wafer is monolithically grown using InGaAsN/GaAs QWs as active layer and GaAs/AlGaAs conventional DBRs. In the structure, the laser employs 39 pairs N-GaAs/Al0.9GaAs and 23 pairs P-GaAs/Al0.9GaAs with a selectively oxide layer located at first DBR close to active region, providing the current and optical confinement. The device processing is similar to the fabrication for current 850nm oxVCSELs. Mesa etching is used to expose the Al-rich AlGaAs layer and followed by oxidation to form the current confinement. The maximum light output power is around 950uW at room temperature under CW operation with a threshold current around 6mA for 10um aperture size devices. The device can still lase at 1000C with a maximum power of 0.14mW. Slope efficiency is 0.133(W/A) and side mode suppression ratio (SMSR) is around 20dB at 10mA operation. The aging data and speed transmission experimental data will also be presented.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. C. Lai, J. S. Pan, Alice C. F. Li, M.C. Tang, C. C. Wu, Tsin-Dong Lee, and K. F. Huang "Long-wavelength oxide-confined VCSEL using InGaAsN quantum wells", Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); https://doi.org/10.1117/12.520474
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