Monolithic integration of 1x2 digital photonic switching with photodetectors

Baojun Li

doi:10.1117/12.521628

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12 May 2004 Monolithic integration of 1x2 digital photonic switching with photodetectors

Baojun Li

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Proceedings Volume 5280, Materials, Active Devices, and Optical Amplifiers; (2004) https://doi.org/10.1117/12.521628
Event: Asia-Pacific Optical and Wireless Communications, 2003, Wuhan, China

Abstract

A digital photonic switching through the use of monolithically grown thin-film photodetectors based on SiGe materials is proposed for optical communication at the wavelengths of 1.3- and 1.55- mm. Experimental analysis has been investigated and shows that the heterostructure can be monolithically integrated with other devices made from similar materials. The device performances are measured. The crosstalks of the digital photonic switching at a forward modulation bias of 1.2 V are -25 and -18 dB at 1.3- and 1.55- mm, respectively. The insertion losses are 2.01 and 2.64 dB for 1.3- and 1.55- mm, respectively. At -5 V reverse bias, the dark currents of the detectors at the 1.3- and 1.55- mm output branches are 45 and 64 nA, respectively. The photocurrent responsivities of 0.08 and 0.07 A/W for the two detectors at the 1.3- and 1.55- mm output branches have been achieved. The quantum efficiencies of the whole switching and detector integration system are estimated to be about 19 and 18.2% for the 1.3- and 1.55- mm output branches, respectively.

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Baojun Li "Monolithic integration of 1x2 digital photonic switching with photodetectors", Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); https://doi.org/10.1117/12.521628

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