12 May 2004 Single-photon detector at 1550 nm with gate-mode quenched InGaAs/InP avalanche photodiode
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Proceedings Volume 5280, Materials, Active Devices, and Optical Amplifiers; (2004) https://doi.org/10.1117/12.520253
Event: Asia-Pacific Optical and Wireless Communications, 2003, Wuhan, China
Abstract
In our recent experiment, we have designed a novel single-photon detecting module for quantum key distribution using an InGaAs/InP avalanche photodiode with gate-mode quenched photo-detection. At a repetition rate of 100 kHz and the working temperature of -60°C, we obtained the detection efficiency η higher than 10% and 20% at the dark probability Pd about 1.3×10-5 and 1.6×10-5 per nanosecond, respectively. Also at 100 kHz, we got the best ratio of Pd/η as 1.7×10-3 per pulse (20 ns). And at a lower repetition such as 10 kHz, we obtained Pd/η as 8.9×10-4 per pulse.
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Guang Wu, Chunyuan Zhou, Xiuliang Chen, Xianghe Li, Heping Zeng, "Single-photon detector at 1550 nm with gate-mode quenched InGaAs/InP avalanche photodiode", Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); doi: 10.1117/12.520253; https://doi.org/10.1117/12.520253
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