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12 May 2004 Visible electro-luminescence from p-n junction porous Si diode
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Proceedings Volume 5280, Materials, Active Devices, and Optical Amplifiers; (2004) https://doi.org/10.1117/12.523014
Event: Asia-Pacific Optical and Wireless Communications, 2003, Wuhan, China
Abstract
The interface formed between a p-type conducting polyaniline layer and a n-type porous silicon wafer was studied. The contact has rectifying behavior demonstrated clearly by the IV curves. The series resistance Rs in the p-type conducting polyaniline/n-porous Si diode is reduced greatly and has a lower onset voltage compared with. ITO/n-porous Si diode. The porous silicon has an orange photoluminescence band after coating with polyaniline. Visible electroluminescence has been obtained from this junction when a forward bias is applied. The emission band is very broad extending from 600-803 nm with a peak at 690nm.
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Hongjian Li, Hao-Yang Cui, Baiyun Huang, Danqing Yi, and Jingcui Peng "Visible electro-luminescence from p-n junction porous Si diode", Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); https://doi.org/10.1117/12.523014
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