18 May 2004 Design and implementation of a real-time positron imager
Author Affiliations +
Proceedings Volume 5297, Real-Time Imaging VIII; (2004); doi: 10.1117/12.543925
Event: Electronic Imaging 2004, 2004, San Jose, California, United States
In this paper we are going to present the first real-time S-parameter positron imager. This is a useful tool in solid state technology for mapping the lateral defect types and concentrations on a material sample. This technology has been developed for two major categories of researchers, the first being those that have a focused low energy positron beam and second those that do not. Here we describe the design and implementation of a real-time automated scanning system that rasters a sample surface with a 0.5mm diameter positron source (or beam focus) so as to give an S-parameter image of a sample. The source (or beam) rasters across a region of a semiconductor sample in rectilinear motion while gamma ray energies Eγ are processed using a standard HP Ge spectroscopy system and a 14 bit nuclear ADC. Two other ADCs are used to obtain the x, y coordinate data corresponding to each event by storing voltage pulses from the x & y stepper motor drives (or saddle coil currents) gated with the event pulses. Using these event data triplets (x, y, Eγ) the S-parameter is computed in real time for each pixel region and is used to refresh a color image display on the screen coordinates. Optimal use is made of processing time and the system resources. This user-friendly system is efficient for producing high resolution S-parameter images of the sample. (patent pending 2003)
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pranab Sabitru Naik, Christopher David Beling, Stevenson Fung, "Design and implementation of a real-time positron imager", Proc. SPIE 5297, Real-Time Imaging VIII, (18 May 2004); doi: 10.1117/12.543925; https://doi.org/10.1117/12.543925

Imaging systems

Semiconducting wafers

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