Characterization Of Material And Optical Effects In Annealed, Proton Irradiated N-Type GaAs

J. M. Zavada; H. A. Jenkinson; R. G. Sarkis; R. G. Wilson; D. K. Sadana

doi:10.1117/12.946485

9 April 1985 Characterization Of Material And Optical Effects In Annealed, Proton Irradiated N-Type GaAs

J. M. Zavada, H. A. Jenkinson, R. G. Sarkis, R. G. Wilson, D. K. Sadana

Author Affiliations +

Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946485
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

Three experimental techniques have been used to examine the material and optical properties of proton irradiated n-type GaAs implanted atiroom temperature and subsequently furnace annealed. The depth profiles of the implanted hydrogen atoms (H) have been determined as a function of anneal temperature for temperatures1up to 600°C using secondary ion mass spectrometry. These profiles display a major redistribution of the IH atoms with movement beginning at 200'C and terminating by 700°C. The optical changes produced by irradiation have been characterized by infrared reflectance measurements that indicate an optically uniform layer is initially formed in the as implanted specimen. Annealing causes this layer to first broaden and then return to almost its as implanted state. The optical changes qualitatively follow the behavior of the SIMS hydrogen profiles. The structural damage caused by irradiation has been studied using cross-sectional transmission electron microscopy. The micrographs show no evidence of damage in the as-implanted GaAs to a resolution of 5 nm. Only in specimens annealed at temperatures at or above 500°C are precipitates and dislocation loops noticeable.

Citation Download Citation

J. M. Zavada, H. A. Jenkinson, R. G. Sarkis, R. G. Wilson, and D. K. Sadana "Characterization Of Material And Optical Effects In Annealed, Proton Irradiated N-Type GaAs", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); https://doi.org/10.1117/12.946485

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