Performance Of The MV-H2O Ion Implanter

R. D. Rathmell; G. E. Hollman; G. A. Linton

doi:10.1117/12.946461

9 April 1985 Performance Of The MV-H2O Ion Implanter

R. D. Rathmell, G. E. Hollman, G. A. Linton

Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946461
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

The performance to date of the Model MV-H2O ion implantation system will be reviewed. The MV-H20 ion implanter is based on a single ended Pelletron accelerator with a 2 MV column rating. It is designed to provide 20 iA of singly charged boron, phosphorus, and arsenic over the energy range of 400 keV to 2000 keV, although it is also expected to perform well down to 200 keV. This system includes a serial cassette to cassette wafer handler capable of automatically processing up to 80 wafers/hr of 100 mm, 125 mm, and 150 mm wafers. Operational features such as implant currents, source lifetimes, wafer throughput, and time to service the source will be presented.

Citation Download Citation

R. D. Rathmell, G. E. Hollman, and G. A. Linton "Performance Of The MV-H2O Ion Implanter", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); https://doi.org/10.1117/12.946461

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