The Microstructure Of High Dose Oxygen Implanted Si And Its Dependence On Implantation Conditions

O. W. Holland; D. Fathy; T. P. Sjoreen; J. Narayan; K. More

doi:10.1117/12.946494

9 April 1985 The Microstructure Of High Dose Oxygen Implanted Si And Its Dependence On Implantation Conditions

O. W. Holland, D. Fathy, T. P. Sjoreen, J. Narayan, K. More

Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946494
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

The formation of a buried dielectric in single crystals of silicon by high dose implantation of oxygen ions is investigated. The dependence of the microstructure on implantation conditions is determined. It will be shown that the microstructure can be tailored by changing the implant conditions to optimize its suitability for the silicon-on-insulator technology. Mechanisms responsible for the formation of the microstructure and the influence of implantation conditions will be discussed.

Citation Download Citation

O. W. Holland, D. Fathy, T. P. Sjoreen, J. Narayan, and K. More "The Microstructure Of High Dose Oxygen Implanted Si And Its Dependence On Implantation Conditions", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); https://doi.org/10.1117/12.946494

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