Paper
2 April 1985 Applications Of Picosecond Transient Raman Spectroscopy
T. L. Gustafson, D. A. Chernoff, J. F. Palmer, D. M. Roberts
Author Affiliations +
Proceedings Volume 0533, Ultrashort Pulse Spectroscopy and Applications; (1985) https://doi.org/10.1117/12.946544
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States
Abstract
We measured picosecond transient Raman spectra of Si trans-stilbene in hexane and Si diphenylbutadiene in THF. We observed 18 vibrational modes in the trans-stilbene spectra and 9 modes in the diphenylbutadiene spectra. The band positions and band shapes of the transient Raman spectra suggest a distribution of molecular conformers in Si having different single and double bond strengths. The band intensities in the trans-stilbene spectra suggest a redistribution of electron density in Sn that is concentrated in the olefinic region and in the ortho and meta region of the phenyl rings. We also measured the low wavenumber Stokes and anti-Stokes spectra in trans-stilbene.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. L. Gustafson, D. A. Chernoff, J. F. Palmer, and D. M. Roberts "Applications Of Picosecond Transient Raman Spectroscopy", Proc. SPIE 0533, Ultrashort Pulse Spectroscopy and Applications, (2 April 1985); https://doi.org/10.1117/12.946544
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Cited by 2 scholarly publications.
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KEYWORDS
Raman spectroscopy

Picosecond phenomena

Silicon

Copper

Tin

Ultraviolet radiation

Visible radiation

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