Picosecond Ingaas PIN Photodiode For 0.95um-1.65um Operation

Kenneth K. Li; H.David Law

doi:10.1117/12.946550

2 April 1985 Picosecond Ingaas PIN Photodiode For 0.95um-1.65um Operation

Kenneth K. Li, H.David Law

Proceedings Volume 0533, Ultrashort Pulse Spectroscopy and Applications; (1985) https://doi.org/10.1117/12.946550
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

A low dark current, high speed InGaAs PIN photodiode suitable for optoelectroinc integration has been fabricated by LPE method on sem-insulating InP substrate. The photodiode has a low dark current density of 2.5x10-6A/cm2 at -10V. At the operating voltage of -5V, external quantum efficiency of >90% at 1.3um and >83% at 1.55um, a rise time of <35ps and a FWHM of <45 ps have been measured. The approach and limitations to the design of a higher speed PIN photodiode will be discussed. The importance of packaging is emphasized, and pulse distortion due to dispersion in miscrostrip line will be discussed.

Citation Download Citation

Kenneth K. Li and H.David Law "Picosecond Ingaas PIN Photodiode For 0.95um-1.65um Operation", Proc. SPIE 0533, Ultrashort Pulse Spectroscopy and Applications, (2 April 1985); https://doi.org/10.1117/12.946550

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