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1 June 2004 High-efficiency high-power 808-nm laser array and stacked arrays optimized for elevated temperature operation
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Proceedings Volume 5336, High-Power Diode Laser Technology and Applications II; (2004) https://doi.org/10.1117/12.533262
Event: Lasers and Applications in Science and Engineering, 2004, San Jose, Ca, United States
Abstract
Operation of 808-nm laser diode pumps at elevated temperature is crucial to many applications. Reliable operation at high power is limited by high thermal load and low catastrophic optical mirror damage (COMD) threshold at elevated temperature range. We demonstrate high efficiency and high power operation at elevated temperatures with high COMD power. These results were achieved through device design optimization such as growth conditions, doping profile, and materials composition of the quantum-well and other layers. Electrical-to-optical efficiency as high as 62 percent was obtained through lowered threshold current and lowered series resistance and increased slope efficiency. The performance of single broad-area laser diodes scales to that of high power single bars on water-cooled copper micro-channel heatsinks or conductively-cooled CS heatsinks. No reduction in bar performance or significant spectral broadening is seen when these micro-channel coolers are assembled into 6-bar and 18-bar cw stacks for the highest power levels.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul A. Crump, Trevor R. Crum, Mark A. DeVito, Jason Farmer, Michael Grimshaw, Zack Huang, Scott A. Igl, Steve Macomber, Prabhu Thiagarajan, and Damian Wise "High-efficiency high-power 808-nm laser array and stacked arrays optimized for elevated temperature operation", Proc. SPIE 5336, High-Power Diode Laser Technology and Applications II, (1 June 2004); https://doi.org/10.1117/12.533262
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