Translator Disclaimer
1 June 2004 High-power high-efficiency 910- to 980-nm broad-area laser diodes
Author Affiliations +
Proceedings Volume 5336, High-Power Diode Laser Technology and Applications II; (2004)
Event: Lasers and Applications in Science and Engineering, 2004, San Jose, Ca, United States
A new generation of very efficient high power laser diodes has been developed. The design was optimized for efficient operation of a long cavity device necessary to reduce electrical and thermal resistance. CW operation of a 100 μm wide laser at 25C yielded slope efficiency as high as 1.14W/A and 64% electrical-to-optical conversion efficiency. Optical power as high as 13.5 W for thermally limited CW operation and 17.3 W for pulsed operation were also recorded.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Victor Rossin, Erik Zucker, Matthew Peters, Matthew Everett, and Bruno Acklin "High-power high-efficiency 910- to 980-nm broad-area laser diodes", Proc. SPIE 5336, High-Power Diode Laser Technology and Applications II, (1 June 2004);


Highly reliable high power AlGaAs GaAs 808 nm diode laser...
Proceedings of SPIE (February 19 2007)
High-power BA Al-free InGaAsP/GaAs SCH SQW lasers
Proceedings of SPIE (August 19 1998)
Power Limits, Efficiency, And Reliability Of 1 D And 2...
Proceedings of SPIE (August 09 1988)
Newly developed high-power laser diode bars
Proceedings of SPIE (February 08 2012)
Advances in high-power semiconductor diode lasers
Proceedings of SPIE (January 05 2008)
Highly reliable high power cw AlGaAs (808 nm) 1 cm...
Proceedings of SPIE (April 10 1995)

Back to Top