14 June 2004 Effect of donors and acceptors on the optical properties of CdGeAs2
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Proceedings Volume 5337, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications III; (2004) https://doi.org/10.1117/12.528547
Event: Lasers and Applications in Science and Engineering, 2004, San Jose, Ca, United States
Abstract
CdGeAs2 is an important nonlinear optical infrared material. Room-temperature absorption and temperature-dependent photoluminescence (PL) of as-grown p-type bulk crystals and crystals doped with indium and tellurium have been measured. The intensity of an intervalence band absorption near 5.5 microns (0.225 eV) is correlated with the intensity of a PL band near 0.55 eV. Both of these optical features indicate the presence of a native shallow acceptor level at 120 meV above the top valence band. The 0.55-eV PL band is donor-acceptor-pair recombination between shallow donors and the shallow acceptor level. A second PL band peaking near 0.35 eV is donor-acceptor-pair recombination between shallow donors and a deeper acceptor at 300 meV above the top valence band. Doping with indium and tellurium produces n-type material. The intervalence band absorption at 5.5 microns is completely eliminated in the n-type samples. Indium donors are incorporated on the Cd site and Te donors are incorporated on the As site.
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Lihua Bai, Lihua Bai, Nelson Y. Garces, Nelson Y. Garces, Chunchuan Xu, Chunchuan Xu, Larry E. Halliburton, Larry E. Halliburton, Nancy C. Giles, Nancy C. Giles, Peter G. Schunemann, Peter G. Schunemann, Kosuke Nagashio, Kosuke Nagashio, Chunhui Yang, Chunhui Yang, Robert S. Feigelson, Robert S. Feigelson, } "Effect of donors and acceptors on the optical properties of CdGeAs2", Proc. SPIE 5337, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications III, (14 June 2004); doi: 10.1117/12.528547; https://doi.org/10.1117/12.528547
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