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15 July 2004 Laser-induced bandgap engineering for multicolor detection with a GaAs/AlGaAs quantum well infrared photodetector
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Proceedings Volume 5339, Photon Processing in Microelectronics and Photonics III; (2004) https://doi.org/10.1117/12.538369
Event: Lasers and Applications in Science and Engineering, 2004, San Jose, Ca, United States
Abstract
Post-growth selective-area laser tuning of quantum well infrared photo-detector (QWIP) material has been investigated as a possible route towards the fabrication of a multicolor low-cost focal plane array device. The method takes advantage of the infrared laser for inducing local temperature of a semiconductor wafer that leads to a spatially selective quantum well intermixing (QWI) process. The wafer consisting of 30-pairs of 6 nm GaAs quantum wells and 35 nm Al0.31Ga0.69As barriers was irradiated by a fast scanning CW Nd:YAG laser beam projecting a total of 12 lines spaced at 0.8 mm. For the chosen pattern, writing scheme and a total power delivered to the sample, a material has been fabricated with 12-regions of distinctly different bandgaps in the range of 790 to 830 nm. Preliminary calculations predict reasonably well the laser-induced temperature profile achieved with a stationary laser beam. However, a more advanced model needs to be developed in order to describe temperature profiles induced with a fast scanning laser beam.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan J. Dubowski, X. Richard Zhang, Xianfan Xu, Jacques Lefebvre, and Zbigniew R. Wasilewski "Laser-induced bandgap engineering for multicolor detection with a GaAs/AlGaAs quantum well infrared photodetector", Proc. SPIE 5339, Photon Processing in Microelectronics and Photonics III, (15 July 2004); https://doi.org/10.1117/12.538369
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