15 July 2004 Modeling the laser-induced diffusible resistance process
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Proceedings Volume 5339, Photon Processing in Microelectronics and Photonics III; (2004) https://doi.org/10.1117/12.525512
Event: Lasers and Applications in Science and Engineering, 2004, San Jose, Ca, United States
Highly accurate resistances can be made by iterative laser-induced local diffusion of dopants from the drain and source of a gateless field effect transistor into its channel, thereby forming an electrical link between two adjacent p-n junction diodes. In this paper we present a complete modeling, which permits to obtain the device characteristics from process parameters. Three-dimensional (3D) temperature calculations are performed from heat diffusion equation using an apparent heat capacity formulation. Melted region determinations are satisfactory compared with in-situ real-time optical measurements of the melted region behavior. Then 3D dopant diffusion profiles are calculated using Fick’s diffusion equation. Finally electronic characteristics are obtained from the new tube multiplexing algorithm for computing the I-V characteristic and the device differential resistance. Numerical simulations using our software are satisfactory compared with experimental I-V measurements.
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Michel Meunier, Michel Meunier, Jean-Yves Degorce, Jean-Yves Degorce, Jean-Numa Gillet, Jean-Numa Gillet, Francois Magny, Francois Magny, "Modeling the laser-induced diffusible resistance process", Proc. SPIE 5339, Photon Processing in Microelectronics and Photonics III, (15 July 2004); doi: 10.1117/12.525512; https://doi.org/10.1117/12.525512

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