Stoichiometric and structural properties of pulsed-laser deposited BaTiO3 thin films on silicon

Jie Xu; Daniel P. Durisin; Gregory W. Auner

doi:10.1117/12.525456

15 July 2004 Stoichiometric and structural properties of pulsed-laser deposited BaTiO₃ thin films on silicon

Jie Xu, Daniel P. Durisin, Gregory W. Auner

Author Affiliations +

Proceedings Volume 5339, Photon Processing in Microelectronics and Photonics III; (2004) https://doi.org/10.1117/12.525456
Event: Lasers and Applications in Science and Engineering, 2004, San Jose, Ca, United States

Abstract

BaTiO₃ thin films have been grown on Si(100) substrate by KrF pulsed-laser deposition (PLD). The influence of substrate temperature and background oxygen pressure on the chemical composition and crystal structure of BaTiO₃ films was studied. The films were characterized by X-ray diffraction (XRD), UV/VIS/NIR spectrometer, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). In our experiments, the BaTiO₃ films with uniform grains were produced at O₂ pressure range of 10-30 mTorr and a substrate temperature of 600°C-620°C. At lower substrate temperature, the XRD patterns of the films displayed weaker peaks with wider FWHM and the AFM images showed grain boundary defects and numerous holes. The compositional analysis performed by XPS indicated that almost stoichiometric 1:1:3 composition BaTiO₃ films were grown by PLD at optimized deposition parameters. The excessive oxygen resulted in the formation of other molecules for the film development. The additional XRD peaks of the films were observed when O₂ pressure was increased.

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Jie Xu, Daniel P. Durisin, and Gregory W. Auner "Stoichiometric and structural properties of pulsed-laser deposited BaTiO₃ thin films on silicon", Proc. SPIE 5339, Photon Processing in Microelectronics and Photonics III, (15 July 2004); https://doi.org/10.1117/12.525456

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