30 December 2003 Characterization of the microloading effect in deep reactive ion etching of silicon
Author Affiliations +
Proceedings Volume 5342, Micromachining and Microfabrication Process Technology IX; (2003) https://doi.org/10.1117/12.524461
Event: Micromachining and Microfabrication, 2004, San Jose, California, United States
Abstract
Knowledge of the magnitude and characteristic length scales of chip-scale process variations due to varying substrate pattern density is essential if compensation measures, such as incorporation of dummy structures, are to be taken during mask layout. Effects of variations in local pattern density on a deep reactive ion etch (DRIE) process have been investigated, and a decrease of the etch rate with increasing local pattern density within a characteristic radius of approximately 4.5 mm has been found. Analytical and numerical calculations confirm the existence of a similar depletion radius under the experimental conditions used.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Soren Jensen, Ole Hansen, "Characterization of the microloading effect in deep reactive ion etching of silicon", Proc. SPIE 5342, Micromachining and Microfabrication Process Technology IX, (30 December 2003); doi: 10.1117/12.524461; https://doi.org/10.1117/12.524461
PROCEEDINGS
8 PAGES


SHARE
Back to Top