30 December 2003 Realization of vertical P+ wall through-wafer
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Proceedings Volume 5342, Micromachining and Microfabrication Process Technology IX; (2003) https://doi.org/10.1117/12.531533
Event: Micromachining and Microfabrication, 2004, San Jose, California, United States
Abstract
P+ walls through wafer can be considered as key regions in the 3D architecture of new bi-directional current and voltage power integrated devices. Moreover, these P+ walls can be used as electrical vias in the design of microsystems, in order to make easier 3D packaging. In this paper, we demonstrate the possibility of fabricating these P+ walls combining the deep RIE of silicon and deposit of boron-doped polysilicon.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. L. Sanchez, E. Scheid, P. Austin, M. Breil, H. Carriere, Pascal Dubreuil, E. Imbernon, F. Rossel, B. Rousset, "Realization of vertical P+ wall through-wafer", Proc. SPIE 5342, Micromachining and Microfabrication Process Technology IX, (30 December 2003); doi: 10.1117/12.531533; https://doi.org/10.1117/12.531533
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