23 December 2003 Novel low coherence metrology for nondestructive characterization of high-aspect-ratio microfabricated and micromachined structures
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Proceedings Volume 5343, Reliability, Testing, and Characterization of MEMS/MOEMS III; (2003) https://doi.org/10.1117/12.530749
Event: Micromachining and Microfabrication, 2004, San Jose, California, United States
Abstract
Novel nondestructive method based on low coherence optical interferometry for measurement of deep etched trenches in MEMs structures is presented. The proposed technique proves to provide very reproducible results and can be easily extended to metrology of other materials such as metals and dielectrics. We present results in real life semiconductor structures and discuss practical and fundamental limits of this technique
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Wojciech Walecki, Wojciech Walecki, Frank Wei, Frank Wei, Phuc Van, Phuc Van, Kevin Lai, Kevin Lai, Tim Lee, Tim Lee, S. H. Lau, S. H. Lau, Ann Koo, Ann Koo, } "Novel low coherence metrology for nondestructive characterization of high-aspect-ratio microfabricated and micromachined structures", Proc. SPIE 5343, Reliability, Testing, and Characterization of MEMS/MOEMS III, (23 December 2003); doi: 10.1117/12.530749; https://doi.org/10.1117/12.530749
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