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23 December 2003Novel low coherence metrology for nondestructive characterization of high-aspect-ratio microfabricated and micromachined structures
Novel nondestructive method based on low coherence optical interferometry for measurement of deep etched trenches in MEMs structures is presented. The proposed technique proves to provide very reproducible results and can be easily extended to metrology of other materials such as metals and dielectrics. We present results in real life semiconductor structures and discuss practical and fundamental limits of this technique
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Wojciech Walecki, Frank Wei, Phuc Van, Kevin Lai, Tim Lee, S. H. Lau, Ann Koo, "Novel low coherence metrology for nondestructive characterization of high aspect ratio micro-fabricated and micro-machined structures," Proc. SPIE 5343, Reliability, Testing, and Characterization of MEMS/MOEMS III, (23 December 2003); https://doi.org/10.1117/12.530749