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24 January 2004 Development of an amorphous diamond (a-D) RF MEMS switch
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Proceedings Volume 5344, MEMS/MOEMS Components and Their Applications; (2004)
Event: Micromachining and Microfabrication, 2004, San Jose, California, United States
We have developed radio frequency microelectromechanical systems (RF MEMS) capacitive switches using amorphous diamond (a-D) as a novel tunable dielectric with controlled leakage. The switch is fabricated from sputtered and electroplated metals using surface micromachining techniques. The mechanical stress and resistivity of the a-D dielectric are controlled by the parameters of a high-temperature annealing process. These initial devices exhibit a down-state capacitance of 2.6 pF, giving an isolation of better than 18 dB at 18 GHz, and a predicted static power dissipation of 10 nW. This technology is promising for the development of reliable, low power RF MEMS switches.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James R. Webster, Christopher W. Dyck, Thomas A. Friedmann, John P. Sullivan, Christopher D. Nordquist, Andrew J. Carton, Garth M. Kraus, and Gary D. Schmidt "Development of an amorphous diamond (a-D) RF MEMS switch", Proc. SPIE 5344, MEMS/MOEMS Components and Their Applications, (24 January 2004);

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