29 December 2003 Fabrication of silicon microstructures using a high-energy ion beam
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Proceedings Volume 5347, Micromachining Technology for Micro-Optics and Nano-Optics II; (2003) https://doi.org/10.1117/12.524314
Event: Micromachining and Microfabrication, 2004, San Jose, California, United States
Abstract
We report an alternative technique which utilizes fast proton or helium ion irradiation prior to electrochemical etching for three-dimensional micro-fabrication in bulk p-type silicon. The ion-induced damage increases the resistivity of the irradiated regions and slows down porous silicon formation. A raised structure of the scanned area is left behind after removal of the un-irradiated regions with potassium hydroxide. The thickness of the removed material depends on the irradiated dose at each region so that multiple level structures can be produced with a single irradiation step. By exposing the silicon to different ion energies, the implanted depth and hence structure height can be precisely varied. We demonstrate the versatility of this three-dimensional patterning process to create multilevel cross structure and free-standing bridges in bulk silicon, as well as sub-micron pillars and high aspect-ratio nano-tips.
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Ee Jin Teo, Ee Jin Teo, Minghui Liu, Minghui Liu, Mark Brian Howell Breese, Mark Brian Howell Breese, Emmanuel P. Tavernier, Emmanuel P. Tavernier, Andrew A. Bettiol, Andrew A. Bettiol, Daniel John Blackwood, Daniel John Blackwood, Frank Watt, Frank Watt, } "Fabrication of silicon microstructures using a high-energy ion beam", Proc. SPIE 5347, Micromachining Technology for Micro-Optics and Nano-Optics II, (29 December 2003); doi: 10.1117/12.524314; https://doi.org/10.1117/12.524314
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