Paper
29 December 2003 Si3N4-based photonic crystal membranes
Author Affiliations +
Abstract
We describe the fabrication process of silicon nitride (Si3N4) based two-dimensional photonic crystals. The fabrication process mainly involves e-beam direct-write lithography and reactive ion etching. The concerned photonic crystal structures consist of a periodic arrangement of sub-micrometric holes transferred into a suspended Si3N4 membrane using a poly-methylmethacrylate resist layer as a mask. Numerical simulations based on a plane wave expansion method for 2D photonic band gap approximation were conducted to determine the design parameters of the photonic crystal membranes. Flat and stress free photonic crystal membranes were achieved with very good control in sidewall profile and feature shape.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Samir Ilias, Bruno Bourliguet, Claude Pare, Alex Paquet, Christine Alain, and Hubert Jerominek "Si3N4-based photonic crystal membranes", Proc. SPIE 5347, Micromachining Technology for Micro-Optics and Nano-Optics II, (29 December 2003); https://doi.org/10.1117/12.530314
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KEYWORDS
Photonic crystals

Silicon

Reactive ion etching

Refractive index

Waveguides

Electron beam lithography

Etching

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