18 June 2004 Color-dependent degradation of high-brightness AlGaInP LEDs
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Operation-induced degradation of internal quantum efficiency of high-brightness (AlxGa1-x)0.5In0.5P light-emitting devices (LEDs) is analysed experimentally and theoretically. A test series of LEDs was grown by MOCVD with identical layer sequence but different Aluminum content x in the active AlGaInP layer resulting in devices emitting light between 644 nm and 560 nm. The analysis yields the wavelength dependence of both the nonradiative recombination constant A as well as the carrier leakage parameter C of devices before and after aging. While test devices with λ>615 nm are very stable, LEDs with shorter emission wavelengths exhibit both an increase of A and a slight decrease of C upon aging. Possible degradation mechanisms are discussed.
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Paola Altieri, Arndt Jaeger, Reiner Windisch, Norbert Linder, Peter Stauss, Raimund Oberschmid, Klaus Streubel, "Color-dependent degradation of high-brightness AlGaInP LEDs", Proc. SPIE 5349, Physics and Simulation of Optoelectronic Devices XII, (18 June 2004); doi: 10.1117/12.529209; https://doi.org/10.1117/12.529209

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