18 June 2004 Effect of oxygen on the electronic band structure of II-O-VI alloys
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We have studied the effects of composition and hydrostatic pressure on the direct optical transitions at the Γ point of the Brillouin zone in MBE-grown ZnOxSe1-x and ion-implantation-synthesized Zn1-yMnyOxTe1-x alloys. We observe a large O-induced band-gap reduction and a change in the pressure dependence of the fundamental band gap of the II-O-VI alloys. The effects are similar to those previously observed and extensively studied in highly mismatched III-N-V alloys. Our results are well explained in terms of the band anticrossing model that considers an anticrossing interaction between the highly localized oxygen states and the extended states of the conduction band of II-VI compounds. The O-induced modification of the conduction band structure offers an interesting possibility of using small amounts of O to engineer the optoelectronics properties of group II-O-VI alloys.
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W. Shan, W. Shan, W. Walukiewicz, W. Walukiewicz, Kin Man Yu, Kin Man Yu, Joel W. Ager, Joel W. Ager, Junqiao Wu, Junqiao Wu, Jeffrey W. Beeman, Jeffrey W. Beeman, M. A. Scapulla, M. A. Scapulla, O. D. Dubon, O. D. Dubon, Eugene E. Haller, Eugene E. Haller, Y. Nabetani, Y. Nabetani, Piotr Becla, Piotr Becla, } "Effect of oxygen on the electronic band structure of II-O-VI alloys", Proc. SPIE 5349, Physics and Simulation of Optoelectronic Devices XII, (18 June 2004); doi: 10.1117/12.529297; https://doi.org/10.1117/12.529297


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