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18 June 2004 Energy distributions of carriers in quantum dot laser structures
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Abstract
Using the segmented contact method, we have measured the passive modal absorption, modal gain and spontaneous emission spectra of an InAs “dot-in-well” (DWELL) system where the inhomogeneous broadening is sufficiently small that the ground and excited state transitions can be spectrally resolved. The modal optical gain from the ground state saturates with current at a maximum value of one third of the magnitude of the measured absorption. The population inversion factor spectrum, obtained from the measured gain and emission spectra, shows that the carrier distributions cannot be described by a single global Fermi distribution. However, the inversion factor spectrum can be described by a system where the ground state and excited state occupancies are each described by a Fermi distribution but with different quasi-Fermi energy separations.
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Simon W. Osborne, Peter Blood, Peter M. Smowton, Julie Lutti, Y. C. Xin, Andreas Stintz, Diana L. Huffaker, and Luke F. Lester "Energy distributions of carriers in quantum dot laser structures", Proc. SPIE 5349, Physics and Simulation of Optoelectronic Devices XII, (18 June 2004); https://doi.org/10.1117/12.540314
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