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18 June 2004 High-power single-mode 1330- and 1550-nm VCSELs bonded to silicon substrates
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Abstract
We demonstrate novel electrically driven 1330 and 1550 nm VCSELs using conventional InGaAsP active regions. The VCSELs employ two TiO2/SiO2 DBR mirrors and an InAlAs tunnel junction that converts electrons to holes, minimizing free carrier losses in the p-type material. The active layers are transferred onto Si wafers using wafer-scale Pd silicide bonding. We have obtained single-mode room-temperature output powers as high as 2.4mW at 1330nm and 2.7mW at 1550nm. At 80C we have obtained 0.6mW of single-mode power at 1330nm and over 1 mW at 1550nm. These are the highest power single-mode InP-based VCSELs reported in these wavelength ranges.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Virginia M. Robbins, Steven D. Lester, David P. Bour, Jeffrey N. Miller, and Francoise Mertz "High-power single-mode 1330- and 1550-nm VCSELs bonded to silicon substrates", Proc. SPIE 5349, Physics and Simulation of Optoelectronic Devices XII, (18 June 2004); https://doi.org/10.1117/12.540323
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