Molecular-beam epitaxy of III-N on novel ZrB2 substrates

Jun Suda

doi:10.1117/12.540326

18 June 2004 Molecular-beam epitaxy of III-N on novel ZrB₂ substrates

Jun Suda

Proceedings Volume 5349, Physics and Simulation of Optoelectronic Devices XII; (2004) https://doi.org/10.1117/12.540326
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

Electrically conductive zirconium diboride (ZrB₂) is a promising lattice-matched substrate for GaN-based nitride semiconductors. In this paper, important properties of ZrB₂ as a substrate for nitrides, such as, thermal expansion coefficient, thermal conductivity, optical reflectivity and cleavage, are reviewed. Then, heteroepitaxial growth of GaN and AlN on the substrate by molecular-beam epitaxy (MBE) are discussed. Direct growth and two-step growth using low-temperature GaN nucleation layers as well as characterization of the surface condition of ZrB₂ substrates by X-ray photoelectron spectroscopy (XPS) and the effect of surface treatment on grown layers are presented.

Citation Download Citation

Jun Suda "Molecular-beam epitaxy of III-N on novel ZrB₂ substrates", Proc. SPIE 5349, Physics and Simulation of Optoelectronic Devices XII, (18 June 2004); https://doi.org/10.1117/12.540326

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