18 June 2004 Optical and electrical properties of interdigitated InGaN/GaN green light-emitting diodes
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Abstract
Properties of InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) grown by MOCVD on sapphire substrates are investigated over a temperature range from 290 to 340 K. Two types of wafers are used to fabricate the devices: one with Mg dopants in p-type epilayers pre-activated in N2 ambient for 4 min at 800 °C, and the other as-grown, without any pre-activation of Mg acceptors. Measured specific resistances of p-side contacts are 1.49x10-4 Ωcm2 for contacts on pre-activated samples annealed at 650°C for 4 min, and 1.55x10-5 Ωcm2 for contacts on as-grown samples annealed at 600 °C for 30 min. Based on the specific contact resistance experiments, interdigitated LEDs are fabricated using either the standard annealing procedures (separate annealings for p-type conduction activation and for ohmic contact formation) or a single-step annealing process (simultaneous annealing for activation of p-type conduction and for ohmic contact formation). In devices fabricated using the standard annealing procedures, the electroluminescence (EL) peak position at 300 K is at 2.379 eV (~521.3 nm) and the full width at half maximum (FWHM) is ~132 meV, while in devices fabricated using a single-step annealing, the EL peak position shows a red shift by ~10 meV without affecting the FWHM. Over the entire voltage range up to 4 V, tunneling is the dominant carrier transport mechanism. The operating voltage is comparable in both types of LEDs, and the output power of LEDs fabricated using the single-step annealing process is somewhat improved.
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Jinhyun Lee, Jinhyun Lee, Petr G. Eliseev, Petr G. Eliseev, Marek Osinski, Marek Osinski, Dong-Seung Lee, Dong-Seung Lee, Jeffrey C. Ramer, Jeffrey C. Ramer, Doru I. Florescu, Doru I. Florescu, Eric A. Armour, Eric A. Armour, "Optical and electrical properties of interdigitated InGaN/GaN green light-emitting diodes", Proc. SPIE 5349, Physics and Simulation of Optoelectronic Devices XII, (18 June 2004); doi: 10.1117/12.540327; https://doi.org/10.1117/12.540327
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