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18 June 2004 The memory effect of a pentacene field-effect transistor with a polarizable gate dielectric
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Abstract
The nonvolatile transistor memory element is an interesting topic in organic electronics. In this case a memory cell consists of only one device where the stored information is written as a gate insulator polarization by a gate voltage pulse and read by the channel conductance control with channel voltage pulse without destruction of the stored information. Therefore such transistor could be the base of non-volatile non-destructively readable computer memory of extremely high density. Also devices with polarizable gate dielectrics can function more effectively in certain circuits. The effective threshold voltage Vt can be brought very close to zero, for applications where the available gate voltage is limited. Resonant and adaptive circuits can be tuned insitu by polarizing the gates. Poly(vinylidene fluoride), PVDF and its copolymer with trifluoroethylene P(VDF-TrFE) are among the best known and most widely used ferroelectric polymers. In this manuscript, we report new results of an organic FET, fabricated with pentacene as the active material and P(VDF-TrFE) as the gate insulator. Application of a writing voltage of -50 V for short duration results in significant change in the threshold voltage and remarkable increase in the drain current. The memory effect is retained over a period of 20 hours.
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K. N. Narayanan Unni, Remi de Bettignies, Sylvie Dabos-Seignon, and Jean-Michel Nunzi "The memory effect of a pentacene field-effect transistor with a polarizable gate dielectric", Proc. SPIE 5351, Organic Photonic Materials and Devices VI, (18 June 2004); https://doi.org/10.1117/12.530655
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