Electron and hole velocity overshoots in an Al0.3Ga0.7As-based p-i-n semiconductor nanostructure observed by subpicosecond time-resolved Raman spectroscopy

W. Liang; Kong-Thon Tsen; David K. Ferry

doi:10.1117/12.528339

16 June 2004 Electron and hole velocity overshoots in an Al_0.3Ga_0.7As-based p-i-n semiconductor nanostructure observed by subpicosecond time-resolved Raman spectroscopy

W. Liang, Kong-Thon Tsen, David K. Ferry

Author Affiliations +

Proceedings Volume 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII; (2004) https://doi.org/10.1117/12.528339
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

We report experimental results on simultaneous measurement of electron as well as hole transient transport in an Al_0.3Ga_0.7As-based p-i-n semiconductor nanostructure by using picosecond/subpicosecond Raman spectroscopy. Electron and hole velocity overshoots are directly observed. These experimental results are discussed and explained.

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W. Liang, Kong-Thon Tsen, and David K. Ferry "Electron and hole velocity overshoots in an Al_0.3Ga_0.7As-based p-i-n semiconductor nanostructure observed by subpicosecond time-resolved Raman spectroscopy", Proc. SPIE 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII, (16 June 2004); https://doi.org/10.1117/12.528339

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