16 June 2004 Evidence of strong phonon-assisted resonant intervalley up-transfer for electroncs in type-II GaAs/AIAs superlattices
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Abstract
We demonstrate that longitudinal-optical (LO) phonons efficiently pump electrons from the quasi-X states to the quasi-Γ states in short-period type-II GaAs/AlAs superlattices. At a very low temperature, the phonon-assisted electron up-transfer can occur if the energy difference between the lowest quasi-Γ states and quasi-X states is equal to or less than the LO phonon energies. As the temperature increases, however, kinetic energies of the electrons can facilitate the electron up-transfer. As a result, we have observed peculiar behaviors on these superlattices. First, photoluminescence intensity for the quasi-direct transition drastically increases as the temperature or pump power increases. Second, the dependence of the integrated photoluminescence intensity on the pump power exhibits a square power law.
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Xiaodong Mu, Xiaodong Mu, Yujie J. Ding, Yujie J. Ding, Zhiming Wang, Zhiming Wang, Gregory J. Salamo, Gregory J. Salamo, } "Evidence of strong phonon-assisted resonant intervalley up-transfer for electroncs in type-II GaAs/AIAs superlattices", Proc. SPIE 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII, (16 June 2004); doi: 10.1117/12.529066; https://doi.org/10.1117/12.529066
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