16 June 2004 Picosecond structural dynamics in photoexcited semiconductors probed by time-resolved x-ray diffraction
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Abstract
Structural dynamics of 300-ps laser irradiated semiconductor is studied by means of picosecond time-resolved X-ray diffraction. Picosecond pulsed X rays are generated by focusing intense femtosecond laser beams onto metal target. Time-resolved X-ray diffraction is performed by a laser pump and X-ray probe technique. Lattice expansion due to acoustic phonon generation and propagation is observed in a silicon crystal in a single laser shot experiment at laser energy density of 1.0 J/cm2. On the other hand, in a multiple laser shot experiment, lattice compression due to laser shock compression is observed at 1.4 J/cm2.
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Kazutaka G. Nakamura, Kazutaka G. Nakamura, Hiroaki Kishimura, Hiroaki Kishimura, Yoichiro Hironaka, Yoichiro Hironaka, Ken-ichi Kondo, Ken-ichi Kondo, } "Picosecond structural dynamics in photoexcited semiconductors probed by time-resolved x-ray diffraction", Proc. SPIE 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII, (16 June 2004); doi: 10.1117/12.523554; https://doi.org/10.1117/12.523554
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