16 June 2004 Subpicosecond Raman studies of nonequilibrium electron transport in an In0.4Ga0.6N epilayer grown on GaN
Author Affiliations +
Abstract
Field-induced electron transport in an InxGa1-xN (x≅0.4) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Non-equilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the InxGa1-xN layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Liang, W. Liang, Kong-Thon Tsen, Kong-Thon Tsen, David K. Ferry, David K. Ferry, K. H. Kim, K. H. Kim, Jing Yu Lin, Jing Yu Lin, Hongxing Jiang, Hongxing Jiang, } "Subpicosecond Raman studies of nonequilibrium electron transport in an In0.4Ga0.6N epilayer grown on GaN", Proc. SPIE 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII, (16 June 2004); doi: 10.1117/12.528322; https://doi.org/10.1117/12.528322
PROCEEDINGS
8 PAGES


SHARE
Back to Top