THz radiation and acoustic phonon pulse wave from GaN-based light-emitting diode structures generated by ultrashort-pulse lasers

Eunsoon Oh; J. Y. Sohn; J. S. Yahng; Young Dahl Jho; Dai Sik Kim; Gary D. Sanders; Christopher J. Stanton

doi:10.1117/12.531339

16 June 2004 THz radiation and acoustic phonon pulse wave from GaN-based light-emitting diode structures generated by ultrashort-pulse lasers

Eunsoon Oh, J. Y. Sohn, J. S. Yahng, Young Dahl Jho, Dai Sik Kim, Gary D. Sanders, Christopher J. Stanton

Author Affiliations +

Proceedings Volume 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII; (2004) https://doi.org/10.1117/12.531339
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

We discuss the generation mechanism of THz radiation and acoustic phonon pulse wave under ultra short pulse excitations in GaN-based light emitting diode (LED) structures containing InGaN/GaN multiple quantum wells. In order to understand the role of piezoelectricity in the THz radiation and acoustic phonon pulse wave generations, an external field was applied in these structures so that the piezoelectric field in the quantum wells was compensated under an external reverse bias. Coherent acoustic phonon pulse wave was found to be independent of the applied voltage, although the strain of the InGaN layers was crucial for the generation of the signals. The THz emission from these structures was found to increase with increasing reverse voltage and excitation energy, similar to the trend of the photocurrents in these structures. The bias and wavelength dependence of the THz generation suggests the carriers associated with the photocurrents are responsible for the THz radiation.

Citation Download Citation

Eunsoon Oh, J. Y. Sohn, J. S. Yahng, Young Dahl Jho, Dai Sik Kim, Gary D. Sanders, and Christopher J. Stanton "THz radiation and acoustic phonon pulse wave from GaN-based light-emitting diode structures generated by ultrashort-pulse lasers", Proc. SPIE 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII, (16 June 2004); https://doi.org/10.1117/12.531339

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