8 June 2004 Polymer flip-chip integrated AlGaAsSb/AlGaSb p-i-n photodetectors for 1550-nm high-speed optical interconnects
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Abstract
AlGaAsSb/AlGaSb heterostructures offer the ability to realize high-performance devices for 1550 nm high-speed optical interconnect applications. In this context, we present the design, fabrication, integration and characterization of 10 GHz p-i-n photodetectors in this material system. This effort has involved an investigation into inductively coupled plasma (ICP) etching of these materials and the development of a novel process for their conductive polymer based flip chip die attach.
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Saurabh K. Lohokare, Saurabh K. Lohokare, Christopher A Schuetz, Christopher A Schuetz, Zhaolin Lu, Zhaolin Lu, Dennis W. Prather, Dennis W. Prather, Oleg V. Sulima, Oleg V. Sulima, Jeffery A. Cox, Jeffery A. Cox, Victor A. Solov'ev, Victor A. Solov'ev, Sergey V. Ivanov, Sergey V. Ivanov, Jian V. Li, Jian V. Li, } "Polymer flip-chip integrated AlGaAsSb/AlGaSb p-i-n photodetectors for 1550-nm high-speed optical interconnects", Proc. SPIE 5353, Semiconductor Photodetectors, (8 June 2004); doi: 10.1117/12.527869; https://doi.org/10.1117/12.527869
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