8 June 2004 Thermal stability of contacts on AlGaN-Based UV photodetectors
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The III-V nitrides (GaN and AlGaN) wide band gap semiconductors have been recognized recently as a very important technological material system for fabricating optoelectronic devices operating in the blue/ultraviolet (UV) spectral region and electronic devices capable of operating under high-power and high-temperature conditions. These materials are remarkably tolerant to aggressive environments, due to its thermal stability and radiation hardness and are excellent photodetector materials to cover the 240-360 nm range. A key advantage of III-nitrides detectors over competing devices based on semiconductors with smaller bandgaps is the long wavelength response cut-off, which is directly related to the bandgap of the material in the active region and thus does not require external filters. Metal-semiconductor-metal (MSM) photodiodes are of interest for many applications because of their relatively simple fabrication process, low dark currents, low noise, and fast response time. In this work, AlGaN-based MSM photodetectors with nickel (Ni) Schottky contacts were fabricated and characterized. A comparative study of the photodiodes characteristics were carried out. The thermal stability of the contacts at various annealing temperatures (300°C-700°C) was investigated. Cryogenic cooling after heat treatment was also performed to determine the effects of this treatment on the electrical characteristics of the devices. Electrical characterization was performed by current-voltage (I-V) measurement to investigate the Schottky contact properties of the photodetectors.
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Kamarulazizi Ibrahim, Kamarulazizi Ibrahim, Ali Abadi Aljubouri, Ali Abadi Aljubouri, Yan Cheung Lee, Yan Cheung Lee, Zainuriah Hassan, Zainuriah Hassan, Md. Roslan Hashim, Md. Roslan Hashim, "Thermal stability of contacts on AlGaN-Based UV photodetectors", Proc. SPIE 5353, Semiconductor Photodetectors, (8 June 2004); doi: 10.1117/12.529002; https://doi.org/10.1117/12.529002


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