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8 June 2004 Ultrathin two-dimensional multi-element Si pin photodiode array for multipurpose applications
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The paper discusses opto-electrical properties of a 32x16 (and 16x16) element pin photodiode array built on a 30-μm thick single silicon die. The element size is ca. 1 mm square or smaller and the gaps between adjacent elements are as small as 100 μm. The arrays can be tiled facilitating the building of large scale photodetector matrices. The arrays have superior optical and electrical characteristics and are designed to work at zero Volts bias. The internal quantum efficiency is close to 100% within the spectral range 500 - 800 nm and could be tuned to a maximum value outside that spectral interval. The cross talk is smaller than 0.5% within the spectral range 400 to 1000 nm. The arrays are characterized with very low leakage currents, high shunt resistance, and low capacitance. Some other parameters of the array like the frequency bandwidth and capacitance are also discussed.
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Richard A. Metzler, Alexander O. Goushcha, Chris Hicks, and Ed Bartley "Ultrathin two-dimensional multi-element Si pin photodiode array for multipurpose applications", Proc. SPIE 5353, Semiconductor Photodetectors, (8 June 2004);

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