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28 May 2004 Development of silicon-on-insulator waveguide technology
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An overview of the present silicon-on-insulator (SOI) waveguide technology is given and supplemented with an extensive set of theory and simulation results. Characteristics of slab-, rectangular- and ridge waveguides in SOI are explained. In particular, the number of modes and the single-mode conditions are carefully analyzed. Experimental work with straight and bent 8 to 10 μm thick SOI ridge waveguides and a very fast thermo-optical switch are reported. Propagation loss in a very long spiral waveguide down to 0.3 dB/cm, waveguide birefringence below 10-4, and a switching frequency up to 167 kHz were obtained. A very promising multi-step patterning principle for SOI waveguides is described together with many practical application examples.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Timo T. Aalto, Mikko Harjanne, Markku Kapulainen, Paivi Heimala, and Matti J. Leppihalme "Development of silicon-on-insulator waveguide technology", Proc. SPIE 5355, Integrated Optics: Devices, Materials, and Technologies VIII, (28 May 2004);

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