Optical and thermomechanical properties of plasma-enhanced CVD silicon dioxide films upon annealing

Duk Yong Choi; Kyung Hee You; Sofia Guessel; Sun Tae Jung

doi:10.1117/12.529062

28 May 2004 Optical and thermomechanical properties of plasma-enhanced CVD silicon dioxide films upon annealing

Duk Yong Choi, Kyung Hee You, Sofia Guessel, Sun Tae Jung

Proceedings Volume 5355, Integrated Optics: Devices, Materials, and Technologies VIII; (2004) https://doi.org/10.1117/12.529062
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

Device parameters, like center frequency, polarization dependent loss (PDL), and optical crosstalk in silica-based waveguide device, are determined by the refractive index (RI) and its uniformity across the wafer, thermal expansion coefficient (TCE), and biaxial elastic modulus of silica film. In this study the optical and thermo-mechanical properties of plasma enhanced CVD silica films with different compositions were investigated before and after thermal annealing. RI of deposited films decreased sharply with N₂O/SiH₄ ratio up to 40, and increased slowly when this ratio was larger than 60. The minimum RI of deposited film was found slightly higher than that of thermal oxide. CTE and elastic modulus of silica film were obtained by measuring the film stress with temperature. Growth stresses of deposited films were increased with N₂O/SiH₄ ratio. Due to the porous structure, the CTE and elastic modulus of deposited films at low temperature range (<400°C) were different from those of pure silica. Sharp rise in stress due to gas evolution from film was observed around 500°C. The amount of stress increase and the origin of evolved gas are dependent on the film composition. When silica films were fully annealed (1100°C for 4hour), their CTE and elastic modulus were the same as those of thermal oxide. Upon annealing at high temperature (~800°C), however, cracks were generated on sub-oxide film, which was deposited at low N₂O/SiH₄ ratio. RI of annealed films changed with the composition of deposited film, the annealing temperature, and the cooling rate after anneal.

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Duk Yong Choi, Kyung Hee You, Sofia Guessel, and Sun Tae Jung "Optical and thermomechanical properties of plasma-enhanced CVD silicon dioxide films upon annealing", Proc. SPIE 5355, Integrated Optics: Devices, Materials, and Technologies VIII, (28 May 2004); https://doi.org/10.1117/12.529062

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KEYWORDS

Oxides

Silica

Annealing

Silicon films

Temperature metrology

Plasma enhanced chemical vapor deposition

Silicon

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